AP1333GU Advanced Power Electronics Corp., AP1333GU Datasheet - Page 4

• Manufacturer Part Number: AP1333GU
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1333GU

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 600
• Rds(on) / Max(m?) Vgs@4.5v: 800
• Rds(on) / Max(m?) Vgs@2.5v: 1000
• Qg (nc): 1.7
• Qgs (nc): 0.3
• Qgd (nc): 0.4
• Id(a): -0.55
• Pd(w): 0.35
• Configuration: Single P
• Package: SOT-323

AP1333GU
0.01
0.1
10
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
T
Single Pulse
90%
10%
Operation in this
V
A
area limited by
V
=25
GS
R
DS
DS(ON)
-V
o
C
DS
Q
1
t
G
V
, Drain-to-Source Voltage (V)
d(on)
I
D
DS
, Total Gate Charge (nC)
1
= -0.5A
= -16V
t
r
2
10
t
d(off)
3
t
100us
1ms
10ms
100ms
1s
DC
f
4
100
Fig 10. Effective Transient Thermal Impedance
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.05
0.01
0.02
V
Duty factor=0.5
0.1
Single Pulse
0.2
0.001
G
3
-V
Q
GS
DS
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
5
Q
0.1
Q
Charge
G
GD
1
7
P
DM
Duty factor = t/T
Peak T
10
j
= P
t
DM
9
f=1.0MHz
T
x R
100
thja
+ T
Q
C
C
a
C
iss
oss
rss
1000
11
4