AP9T16AGH-HF Advanced Power Electronics Corp., AP9T16AGH-HF Datasheet - Page 3

• Manufacturer Part Number: AP9T16AGH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9T16AGH-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 20
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 16
• Qgs (nc): 2.5
• Qgd (nc): 6
• Id(a): 19.5
• Pd(w): 12.5
• Configuration: Single N
• Package: TO-252

100
80
60
40
20
24
20
16
12
0
20
16
12
8
8
4
0
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
2
V
V
SD
2
GS
DS
T
0.4
, Source-to-Drain Voltage (V)
C
T
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
=25
j
=150
4
o
0.6
C
o
C
4
I
T
0.8
D
C
6
=10A
=25
℃
1.0
T
6
j
=25
8
V
G
1.2
=2.0V
o
5.0V
4.5V
3.5V
2.5V
C
1.4
10
8
1.8
1.2
0.6
0.0
2.0
1.6
1.2
0.8
0.4
80
60
40
20
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
I
D
D
G
=250uA
=12A
=4.5V
Junction Temperature
V
v.s. Junction Temperature
DS
T
T
2
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
T
C
= 150
AP9T16AGH-HF
50
50
4
o
C
100
100
6
o
o
C)
C)
V
G
=2.0V
5.0V
4.5V
3.5V
2.5V
150
150
8
3