AP9T16AGH-HF Advanced Power Electronics Corp., AP9T16AGH-HF Datasheet - Page 4

• Manufacturer Part Number: AP9T16AGH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9T16AGH-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 20
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 16
• Qgs (nc): 2.5
• Qgd (nc): 6
• Id(a): 19.5
• Pd(w): 12.5
• Configuration: Single N
• Package: TO-252

AP9T16AGH-HF
1000
100
0.1
10
50
40
30
20
10
8
6
4
2
0
0
1
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Single Pulse
V
I
V
Operation in this
T
D
area limited by
DS
DS
= 12 A
C
R
DS(ON)
=16V
=25
=5V
T
j
o
V
V
=150
C
GS
DS
1
8
Q
G
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
o
, Total Gate Charge (nC)
C
1
T
T
j
=25
j
=-40
2
16
o
C
o
C
10
3
24
100ms
100us
10ms
10us
1ms
DC
4
32
100
Fig 10. Effective Transient Thermal Impedance
Fig 12. Maximum Continuous Drain Current
1600
1200
800
400
0.01
0
0.1
24
20
16
12
0.00001
Fig 8. Typical Capacitance Characteristics
8
4
0
1
1
25
0.02
0.05
0.01
0.2
0.1
Duty factor=0.5
Single Pulse
v.s. Case Temperature
0.0001
5
V
50
DS
T
C
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
, Case Temperature (
0.001
9
75
0.01
13
100
P
DM
0.1
Duty factor = t/T
Peak T
17
j
o
= P
t
C )
DM
125
T
x R
f=1.0MHz
1
21
thjc
+ T
C
C
C
C
oss
iss
rss
150
10
25
4