AP2321GN-HF Advanced Power Electronics Corp., AP2321GN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2321GN-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2321GN-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 75
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 6
• Qgs (nc): 1.5
• Qgd (nc): 3
• Id(a): -3.1
• Pd(w): 1.38
• Configuration: Single P
• Package: SOT-23

120
110
100
10
20
16
12
90
80
70
60
8
6
4
2
0
8
4
0
0.00
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
1.00
-V
-V
DS
GS
4
SD
, Drain-to-Source Voltage (V)
0.4
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
j
=150
2.00
0.6
T
A
o
=25
6
C
I
T
D
0.8
A
o
3.00
= -2A
C
=25
o
C
1
8
V
4.00
T
G
j
=25
= -4.0V
-7.0V
-6.0V
-5.0V
1.2
-10V
o
C
5.00
10
1.4
20
16
12
1.8
1.6
1.4
1.2
0.8
0.6
1.4
1.2
0.8
0.6
0.4
8
4
0
1
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
T
D
Fig 6. Gate Threshold Voltage v.s.
I
V
A
= -250uA
D
= 150
GS
= -3A
= -10V
1
-V
v.s. Junction Temperature
o
Junction Temperature
T
C
T
DS
j
0
0
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2.01E+08
2
50
50
3
AP2321GN-HF
65mΩ
4
100
100
o
V
o
C)
C)
G
5
= -4.0V
-7.0V
-6.0V
-5.0V
-10V
150
150
6
3