AP4530GM Advanced Power Electronics Corp., AP4530GM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP4530GM

Manufacturer Part Number
AP4530GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4530GM

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
7
Qgs (nc)
1.2
Qgd (nc)
3.4
Id(a)
5.7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4530GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Company:
Part Number:
AP4530GM
Quantity:
45 000
Part Number:
AP4530GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Lower Gate Charge
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
D1
D1
SO-8
3
3
D2
D2
S1
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
±20
40
5.7
4.5
20
G1
-55 to 150
-55 to 150
Rating
0.016
2
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
-4.2
-3.4
±20
-40
-20
G2
AP4530GM
36mΩ
68mΩ
-4.2A
-40V
5.7A
Units
W/℃
℃/W
40V
Unit
W
201101071
V
V
A
A
A
D2
S2
1

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AP4530GM Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 N-channel Parameter 3 AP4530GM RoHS-compliant Product N-CH BV 40V DSS R 36mΩ DS(ON) I 5.7A D P-CH BV -40V DSS R 68mΩ DS(ON) I -4. ...

Page 2

... AP4530GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... DS V =±20V =- =-30V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.5A =-3A dI/dt=-100A/µs AP4530GM Min. Typ. =-250uA - =-250uA - 1 =-10V - 24 GS ...

Page 4

... AP4530GM N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4530GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. Single Pulse Duty factor = t/T Peak T ...

Page 6

... AP4530GM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Duty factor=0.5 0.2 100us 0.1 1ms 0.1 0.05 10ms 0.02 100ms 1s DC 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4530GM f=1.0MHz Drain-to-Source Voltage ( Duty factor = t/T 0.01 Peak thja o R =135 ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4530GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW: ...

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