AP4530GM Advanced Power Electronics Corp., AP4530GM Datasheet - Page 7

• Manufacturer Part Number: AP4530GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4530GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
30
25
20
15
10
12
10
10
5
0
8
6
4
2
0
1
0.0
0.1
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
V
DS
Single Pulse
T
=-5V
A
=25
-V
-V
Q
4.0
GS
DS
G
o
V
C
I
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
DS
, Drain-to-Source Voltage (V)
2
1
D
=-3A
=-30V
T
j
=25
8.0
o
C
10
4
12.0
T
j
=150
100ms
100us
10ms
1ms
DC
1s
o
C
16.0
100
6
Fig 10. Effective Transient Thermal Impedance
0.01
1000
0.1
100
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
0.2
0.1
Duty factor=0.5
0.05
0.02
V
0.01
G
0.001
5
Single Pulse
-V
Q
GS
DS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
GD
0.1
Charge
17
1
P
AP4530GM
DM
Duty factor = t/T
Peak T
R
thja
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
10
x R
25
thja
+ T
Q
C
C
C
a
iss
oss
rss
100
29
7