AP4569GH Advanced Power Electronics Corp., AP4569GH Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4569GH

Manufacturer Part Number
AP4569GH
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4569GH

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
42
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
6
Qgs (nc)
1.2
Qgd (nc)
3.2
Id(a)
10.5
Pd(w)
8
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Thermal Resistance Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Parameter
Parameter
1
S1
G1
3
3
S2
G2
3
TO-252-4L
3
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
Max.
±20
10.5
40
6.6
40
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
0.06
8
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
DSS
DSS
Value
S1
±20
110
-40
-40
16
-8
-5
G2
AP4569GH
200628062-1/7
42mΩ
75mΩ
10.5A
W/℃
-40V
Units
Units
℃/W
℃/W
-8A
40V
W
V
V
A
A
A
D2
S2

Related parts for AP4569GH

AP4569GH Summary of contents

Page 1

... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 3 AP4569GH Pb Free Plating Product N-CH BV 40V DSS R 42mΩ DS(ON) I 10.5A D P-CH BV -40V DSS R 75mΩ DS(ON) I -8A ...

Page 2

... AP4569GH N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-30V DS V =-4. =-20V =3.3Ω, =4Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-5A =-5A dI/dt=-100A/µs AP4569GH Min. Typ. =-250uA -40 - =-1mA - -0. =-250uA -0 7.3 - 1.3 - 3 ...

Page 4

... AP4569GH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 0.1 1ms 10ms 100ms DC 0.01 0.00001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4569GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Single Pulse Duty factor = t/T Peak T ...

Page 6

... AP4569GH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 160 120 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 0.1 1ms 10ms 100ms DC 0.01 0.00001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4569GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Duty factor = t/T Peak Single Pulse 0 ...

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