AP4569GH Advanced Power Electronics Corp., AP4569GH Datasheet - Page 6

• Manufacturer Part Number: AP4569GH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4569GH

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 42
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 1.2
• Qgd (nc): 3.2
• Id(a): 10.5
• Pd(w): 8
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
AP4569GH
160
120
30
20
10
80
40
0
10
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
-V
2
GS
DS
SD
4
, Gate-to-Source Voltage (V)
T
0.4
, Drain-to-Source Voltage (V)
j
, Source-to-Drain Voltage (V)
=150
4
o
0.6
C
6
T
I
0.8
T
C
D
6
=25
C
= -3 A
=25
o
C
1
o
T
C
8
V
j
=25
G
8
= - 3.0V
1.2
o
- 7.0V
- 5.0V
- 4.5V
- 10V
C
10
1.4
10
120.0
100.0
80.0
60.0
40.0
1.8
1.4
1.0
0.6
30
20
10
0
25
0
0
Fig 6. On-Resistance vs.
T
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
D
C
G
= -5 A
= 150
= - 10V
-V
Drain Current
o
v.s. Junction Temperature
2
50
C
DS
T
5
V
, Drain-to-Source Voltage (V)
j
-I
V
GS
, Junction Temperature (
D
GS
= -4.5V
, Drain Current (A)
= -10V
4
75
10
6
100
15
V
o
G
8
125
C)
= - 3.0V
- 7.0V
- 5.0V
- 4.5V
- 10V
10
150
20
6/7