AP20N15GH-HF Advanced Power Electronics Corp., AP20N15GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP20N15GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP20N15GH-HF

• Vds: 150V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 100
• Qg (nc): 22
• Qgs (nc): 6
• Qgd (nc): 7.7
• Id(a): 20
• Pd(w): 89.2
• Configuration: Single N
• Package: TO-252

100
90
80
70
60
10
60
50
40
30
20
10
8
6
4
2
0
0
0
0
4
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
5
o
T
V
V
C
V
Reverse Diode
j
DS
SD
=150
GS
4
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
o
6
C
0.6
8
7
T
I
0.8
C
D
=25
=10A
T
8
j
o
=25
C
1
12
o
C
V
G
9
1.2
= 6.0 V
9.0 V
8.0 V
7.0 V
10 V
1.4
16
10
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
D
C
G
= 150
=10A
=10V
V
v.s. Junction Temperature
Junction Temperature
4
DS
o
T
C
T
0
0
, Drain-to-Source Voltage (V)
j
j
, Junction Temperature (
, Junction Temperature (
8
AP20N15GH-HF
50
50
12
100
100
V
G
o
o
16
C)
= 6.0 V
C)
9.0 V
10 V
8.0V
7.0V
150
20
150
3