AP20N15GH-HF Advanced Power Electronics Corp., AP20N15GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP20N15GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP20N15GH-HF

• Vds: 150V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 100
• Qg (nc): 22
• Qgs (nc): 6
• Qgd (nc): 7.7
• Id(a): 20
• Pd(w): 89.2
• Configuration: Single N
• Package: TO-252

AP20N15GH-HF
100
100
0.1
10
80
60
40
20
12
10
1
0
8
6
4
2
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Typical Power Dissipation
I
Operation in this
area limited by
T
Single Pulse
D
c
R
= 14 A
DS(ON)
=25
V
V
DS
Q
o
T
DS
C
1
10
, Drain-to-Source Voltage (V)
G
C ,
= 120 V
, Total Gate Charge (nC)
Case Temperature (
50
10
20
100
o
100
C )
30
100ms
100us
10ms
1ms
DC
1000
150
40
Fig 10. Effective Transient Thermal Impedance
1600
1200
0.01
800
400
0.1
0.00001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.01
0.02
0.05
0.2
0.1
V
G
Single Pulse
Duty factor=0.5
5
V
0.0001
Q
DS
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
C
C
C
C
oss
rss
iss
1
29
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