AP50T10GI-HF Advanced Power Electronics Corp., AP50T10GI-HF Datasheet - Page 3

• Manufacturer Part Number: AP50T10GI-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP50T10GI-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 70
• Qg (nc): 44
• Qgs (nc): 7
• Qgd (nc): 20
• Id(a): 21.8
• Pd(w): 31.3
• Configuration: Single N
• Package: TO-220CFM

100
80
60
40
20
60
50
40
30
20
20
16
12
0
8
4
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
DS
V
T
SD
4
GS
4
, Drain-to-Source Voltage (V)
Reverse Diode
j
0.4
=150
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
o
C
0.6
8
6
T
I
T
C
0.8
D
C
= 25
=12A
=25
T
o
o
C
j
C
1
=25
12
8
V
o
C
G
1.2
= 4.0V
5.0V
7.0V
6.0V
10V
16
1.4
10
Fig 2. Typical Output Characteristics
1.6
1.2
0.8
0.4
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
2
0
-50
0
-50
I
I
V
T
D
D
=250uA
C
G
=16A
= 150
=10V
Junction Temperature
v.s. Junction Temperature
V
4
DS
o
T
T
C
0
0
j
, Drain-to-Source Voltage (V)
j
,Junction Temperature (
, Junction Temperature (
8
50
50
AP50T10GI-HF
12
100
100
o
o
16
C)
V
C)
G
= 4.0V
7.0V
6.0V
5.0V
10V
150
20
150
3