AP50T10GI-HF Advanced Power Electronics Corp., AP50T10GI-HF Datasheet - Page 4

• Manufacturer Part Number: AP50T10GI-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP50T10GI-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 70
• Qg (nc): 44
• Qgs (nc): 7
• Qgd (nc): 20
• Id(a): 21.8
• Pd(w): 31.3
• Configuration: Single N
• Package: TO-220CFM

AP50T10GI-HF
Fig 11. Maximum Continuous Drain Current
1000
100
0.1
12
10
24
20
16
12
10
8
6
4
2
0
1
8
4
0
0.1
Fig 9. Maximum Safe Operating Area
25
0
I
V
Fig 7. Gate Charge Characteristics
T
Single Pulse
D
Operation in this
area limited by
DS
c
=16A
R
=25
=80V
DS(ON)
v.s. Case Temperature
10
50
o
V
C
DS
Q
T
1
G
C
, Drain-to-Source Voltage (V)
, Case Temperature (
, Total Gate Charge (nC)
20
75
10
100
30
125
40
o
100
C )
100us
1ms
10ms
100ms
DC
150
50
1000
175
60
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
3000
2000
1000
0.01
0.1
0.00001
1
0
1
Fig 12. Gate Charge Waveform
10V
0.05
0.02
0.2
V
0.1
Duty factor=0.5
0.01
G
Single Pulse
0.0001
5
Q
V
DS
GS
9
t , Pulse Width (s)
0.001
,Drain-to-Source Voltage (V)
Q
Q
13
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
1
x R
25
thjc
Q
+ T
C
C
C
C
oss
iss
rss
10
29
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