AP16N50W Advanced Power Electronics Corp., AP16N50W Datasheet - Page 4

• Manufacturer Part Number: AP16N50W
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP16N50W

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 400
• Qg (nc): 33
• Qgs (nc): 11
• Qgd (nc): 9
• Id(a): 16
• Pd(w): 250
• Configuration: Single N
• Package: TO-3P

AP16N50W
100
10
1
0
12
10
8
6
4
2
0
1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Operation in this area
limited by R
10%
Single Pulse
90%
T
V
V
C
GS
DS
=25
V
DS(ON)
DS
o
C
10
t
,Drain-to-Source Voltage (V)
Q
d(on)
G
10
, Total Gate Charge (nC)
t
r
V
DS
I
D
20
=400V
=16A
100
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
1000
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
10
0.1
1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
Duty factor = 0.5
0.1
0.02
Single Pulse
0.05
0.2
0.01
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
C
C
+ T
Q
iss
oss
rss
C
1
29
4