74HC125DTR2G ON Semiconductor, 74HC125DTR2G Datasheet - Page 3

IC BUFF TRI-ST QD N-INV 14TSSOP

74HC125DTR2G

Manufacturer Part Number
74HC125DTR2G
Description
IC BUFF TRI-ST QD N-INV 14TSSOP
Manufacturer
ON Semiconductor
Series
74HCr
Datasheet

Specifications of 74HC125DTR2G

Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
4
Number Of Bits Per Element
1
Current - Output High, Low
7.8mA, 7.8mA
Voltage - Supply
2 V ~ 6 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Logic Family
HC
Number Of Channels Per Chip
4
Polarity
Non-Inverting
Supply Voltage (max)
6 V
Supply Voltage (min)
2 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
High Level Output Current
- 7.8 mA
Low Level Output Current
7.8 mA
Minimum Operating Temperature
- 55 C
Number Of Lines (input / Output)
4 / 4
Output Type
3-State
Propagation Delay Time
90 ns at 2 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74HC125DTR2GOSTR
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
V
Symbol
in
V
V
V
t
V
I
I
V
T
, V
r
I
OZ
CC
CC
, t
OH
OL
in
IH
A
IL
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output
Voltage
Maximum Low−Level Output
Voltage
Maximum Input Leakage Current
Maximum Three−State Leakage
Current
Maximum Quiescent Supply Current
(per Package)
(Figure 1)
Parameter
Parameter
(Voltages Referenced to GND)
V
|I
V
|I
V
|I
V
V
|I
V
V
Output in High−Impedance State
V
V
V
I
out
out
out
out
out
out
out
in
in
in
in
in
in
out
in
V
V
V
CC
CC
CC
= V
= V
= V
= V
= V
= V
= V
| v 20 mA
| v 20 mA
| v 20 mA
| v 20 mA
= 0 mA
= V
= 0.1 V
= V
= 2.0 V
= 4.5 V
= 6.0 V
IH
IH
IL
IL
CC
IL
CC
http://onsemi.com
CC
CC
Test Conditions
or V
or GND
or GND
– 0.1 V
or GND
IH
3
– 55
Min
2.0
|I
|I
|I
|I
|I
|I
0
0
0
0
out
out
out
out
out
out
| v 3.6 mA
| v 6.0 mA
| v 7.8 mA
| v 3.6 mA
| v 6.0 mA
| v 7.8 mA
+ 125
1000
Max
V
500
400
6.0
CC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
6.0
6.0
6.0
(V)
Unit
CC
_C
ns
V
V
– 55 to
25_C
3.15
1.35
2.48
3.98
5.48
0.26
0.26
0.26
±0.1
±0.5
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
0.1
0.1
0.1
4.0
Guaranteed Limit
v 85_C
3.15
1.35
2.34
3.84
5.34
0.33
0.33
0.33
±1.0
±5.0
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
0.1
0.1
0.1
40
v 125_C
3.15
1.35
±1.0
±10
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
2.2
3.7
5.2
0.1
0.1
0.1
0.4
0.4
0.4
40
Unit
mA
mA
mA
V
V
V
V

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