IXTM40N30 IXYS, IXTM40N30 Datasheet - Page 3

• Manufacturer Part Number: IXTM40N30
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM40N30

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-204

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2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
-50
0
0
T
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
J
T
-25
= 25°C
J
= 25°C
2
20
0
Case Temperature
40N30
35N30
4
DS(on)
40
T
25
V
I
C
D
V
V
GS
- Degrees C
GS
vs. Drain Current
- Amperes
6
DS
= 10V
= 10V
- Volts
60
50
8
V
GS
75
= 15V
80
10
100 125 150
8V
7V
100
12
6V
5V
120
14
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
70
60
50
40
30
20
10
0
-50
-50
0
IXTH 35N30
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
1
-25
-25
V
GS(th)
2
of Drain to Source Resistance
0
Breakdown and Threshold Voltage
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
I
D
T
GS
J
= 20A
= 25°C
50
50
- Volts
5
6
75
75
IXTH 40N30
IXTM 40N30
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4