IXTM40N30 IXYS, IXTM40N30 Datasheet - Page 4

• Manufacturer Part Number: IXTM40N30
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM40N30

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-204

© 2000 IXYS All rights reserved
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
10
0.00001
8
6
4
2
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.2
D=0.1
D=0.5
D=0.05
D=0.02
D=0.01
V
I
I
Single Pulse
D
G
DS
= 21A
= 10mA
25
= 150V
5
Gate Charge - nCoulombs
50
75
0.0001
10
Vds - Volts
f = 1 MHz
V
DS
100 125 150 175 200
C
= 25V
C
C
oss
rss
iss
15
20
0.001
25
Time - Seconds
0.01
100
10
80
70
60
50
40
30
20
10
1
0
0.0
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
IXTH 35N30
Limited by R
0.2
0.1
to Drain Voltage
0.4
DS(on)
T
J
= 125°C
0.6
10
V
V
DS
SD
0.8
- Volts
- Volts
1
T
1.0
J
IXTH 40N30
IXTM 40N30
= 25°C
1.2
100
1.4
1.6
300
10
10µs
100µs
1ms
10ms
100ms
4 - 4