IXFR32N80Q3 IXYS, IXFR32N80Q3 Datasheet

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IXFR32N80Q3

Manufacturer Part Number
IXFR32N80Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFR32N80Q3

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.30
Ciss, Typ, (pf)
6940
Qg, Typ, (nc)
140
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR32N80Q3
Quantity:
8
HiperFET
Power MOSFET
Q3-Class
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 4mA
= 16A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFR32N80Q3
20..120/4.5..27
800
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
2500
Typ.
800
800
±30
±40
500
150
300
260
24
80
32
50
5
3
±200 nA
Max.
300 mΩ
6.5
50 μA
2 mA
N/lb.
V/ns
V∼
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
Features
Advantages
Applications
V
I
R
t
ISOPLUS247
G = Gate
S = Source
D25
rr
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
E153432
D
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
S
D
300mΩ Ω Ω Ω Ω
800V
24A
300ns
= Drain
Isolated Tab
DS100362(07/11)

Related parts for IXFR32N80Q3

IXFR32N80Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 16A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFR32N80Q3 Maximum Ratings 800 = 1MΩ 800 GS ±30 ± ≤ 150° 500 -55 ... +150 150 -55 ... +150 300 260 2500 20 ...

Page 2

... I = 16A 48 DSS D 63 0.15 Characteristic Values Min. Typ. JM 1.4 12.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR32N80Q3 ISOPLUS247 (IXFR) Outline Max Ω 0.25 °C/W °C/W Max 128 A 1.4 V 300 ns μC A 6,404,065 B1 ...

Page 3

... Value vs 125º 25º IXFR32N80Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 1.2 100 C iss 10 C oss C rss IXFR32N80Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 400V 16A 10mA 100 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFR32N80Q3 0 100 IXYS REF: F_32N80Q3(R8) 7-13-11 ...

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