IXFR32N80Q3 IXYS, IXFR32N80Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFR32N80Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFR32N80Q3

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.30
• Ciss, Typ, (pf): 6940
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
90
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
10
0
5
0
0.3
0
4
f
4.5
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
10
5.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
6
15
T
T
J
J
0.7
V
V
V
6.5
= 125ºC
= 125ºC
DS
SD
GS
20
- Volts
- Volts
- Volts
0.8
7
25
7.5
25ºC
0.9
C iss
C oss
C rss
T
J
8
30
= 25ºC
1.0
8.5
- 40ºC
35
1.1
9
1.2
9.5
40
100
10
1
10
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
0
0
T
T
Single Pulse
J
C
V
I
I
R
= 150ºC
D
G
= 25ºC
DS
DS(on)
5
= 16A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 400V
Limit
10
50
15
Fig. 8. Transconductance
Fig. 10. Gate Charge
20
Q
G
V
- NanoCoulombs
DS
I
D
25
100
- Amperes
- Volts
IXFR32N80Q3
100
30
35
T
J
= - 40ºC
40
150
125ºC
25ºC
45
50
25µs
100µs
1ms
1,000
200
55