MMIX1F44N100Q3 IXYS, MMIX1F44N100Q3 Datasheet

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MMIX1F44N100Q3

Manufacturer Part Number
MMIX1F44N100Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F44N100Q3

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.245
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
264
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
HiperFET
Power MOSFET
Q3-Class
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
DSS
, V
GS
, I
, V
DD
D
D
D
= 3mA
≤ V
GS
= 8mA
= 22A, Note 1
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
MMIX1F44N100Q3
JM
50..200 / 11..45
1000
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1000
1000
2500
Typ.
±30
±40
110
694
150
300
260
30
44
50
8
4
±200 nA
Max.
245 mΩ
6.5
50 μA
3 mA
N/lb.
V/ns
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
G = Gate
S = Source
FFeatures
Advantages
Applications
D25
rr
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
Low
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
Intrinsic Gate Resistance
S
Isolated Tab
S
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
245mΩ Ω Ω Ω Ω
G
30A
1000V
300ns
DS100429(01/12)
(2500V~)
D
D

Related parts for MMIX1F44N100Q3

MMIX1F44N100Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 22A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1F44N100Q3 Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ±40 30 110 ≤ 150° 694 -55 ... +150 150 -55 ... +150 300 260 2500 50 ...

Page 2

... 264 , I = 22A 76 DSS D 110 0.05 Characteristic Values Min. Typ. JM 2.1 16.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F44N100Q3 Max Ω 0.18 °C/W °C/W Max 176 A 1.4 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value vs 125º 25º MMIX1F44N100Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1000 C iss 100 C oss rss 0 MMIX1F44N100Q3 Fig. 8. Transconductance 40ºC J 25º Amperes D Fig. 10. Gate Charge V = 500V 22A 10mA 120 160 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds MMIX1F44N100Q3 1 IXYS REF: F_44N100Q3(Q9)12-15-11-A 10 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1F44N100Q3 PIN Gate 5-12 = Source 13-24 = Drain ...

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