MMIX1F44N100Q3 IXYS, MMIX1F44N100Q3 Datasheet - Page 4

• Manufacturer Part Number: MMIX1F44N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of MMIX1F44N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.245
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 264
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 694
• Rthjc, Max, (ºc/w): 0.18

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
140
120
100
100
70
60
50
40
30
20
10
80
60
40
20
10
0
0
4.5
0.3
0
f
0.4
= 1 MHz
5.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5.5
10
0.6
Fig. 7. Input Admittance
6.0
Fig. 11. Capacitance
15
0.7
T
T
J
V
6.5
V
V
J
= 125ºC
DS
SD
GS
= 125ºC
0.8
20
- Volts
- Volts
- Volts
7.0
0.9
25
T
7.5
25ºC
J
C oss
C rss
1.0
C iss
= 25ºC
30
8.0
1.1
- 40ºC
35
8.5
1.2
9.0
1.3
40
1000
100
0.1
10
1
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
T
T
Single Pulse
J
C
V
I
I
= 150ºC
D
G
= 25ºC
DS
= 22A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 500V
10
40
R
DS(on)
Limit
80
20
Fig. 8. Transconductance
MMIX1F44N100Q3
Fig. 10. Gate Charge
Q
G
120
- NanoCoulombs
V
30
I
D
DS
- Amperes
1ms
100
- Volts
T
160
J
40
= - 40ºC
25ºC
125ºC
200
50
100µs
240
60
1,000
280
70