IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet
IXTT10N100D2
Specifications of IXTT10N100D2
Related parts for IXTT10N100D2
IXTT10N100D2 Summary of contents
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... DSX 0V 5A, Note 1 DS(on 0V 25V, Note 1 D(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH10N100D2 IXTT10N100D2 Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. ...
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... Characteristic Values Min. Typ. = 75° 176 C Characteristic Values Min. Typ. 0.8 1.2 23 13.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH10N100D2 IXTT10N100D2 TO-247 Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 1 0.18 °C ...
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... J 1.E+ 3.50V 1.E+ 3.75V 1.E+09 - 4.00V 1.E+08 - 4.25V 1.E+07 - 4.50V 1.E+06 - 4.75V 1.E+05 - 5.00V 1.E+04 700 800 900 1000 1100 1200 IXTH10N100D2 IXTT10N100D2 Fig. 2. Extended Output Characteristics @ Volts DS Fig. 4. Drain Current @ T 0 100 200 300 400 500 600 700 V - Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage ...
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... Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.4 0.5 0 Volts SD IXTH10N100D2 IXTT10N100D2 = 5A Value 40ºC J 25ºC 125º 25ºC J 0.7 0.8 0.9 ...
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... Fig. 17. Maximum Transient Thermal Impedance 100ms DC 0 1,000 10 Fig. 17. Maximum Transient Thermal Impedance hvjv 0.001 0.01 Pulse Width - Seconds IXTH10N100D2 IXTT10N100D2 Fig. 14. Gate Charge V = 500V 10mA 100 120 140 Q - NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75º ...