IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet - Page 3

• Manufacturer Part Number: IXTT10N100D2
• Description: D2 Depletion Mode Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT10N100D2

• Vds, Max, (v): 1000
• Id(on), Min, (a): 1.5
• Rds(on), Max, (?): -4.5
• Vgs(off), Max, (v): 5320
• Ciss, Typ, (pf): 70
• Crss, Typ, (pf): 200
• Qg, Typ, (nc): 695
• Pd, (w): 0.18
• Rthjc, Max, (ºc/w): -
• Package Style: TO268

© 2011 IXYS CORPORATION, All Rights Reserved
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
0
100
1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
200
4
2
Fig. 5. Drain Current @ T
300
3
400
8
4
500
V
V
V
5
DS
DS
DS
12
600
- Volts
- Volts
- Volts
6
700
V
GS
7
V
800
16
J
= 5V
GS
= 100ºC
1V
= 5V
8
J
0V
J
- 2V
- 3V
900
-1V
= 125ºC
= 25ºC
-1V
- 2V
- 3V
0V
V
GS
1000 1100 1200
9
20
= - 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
- 5.00V
10
24
11
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
24
20
16
12
8
4
0
-5.0
0
0
Fig. 2. Extended Output Characteristics @ T
100
-4.8
Fig. 6. Dynamic Resistance vs. Gate Voltage
200
5
-4.6
300
Fig. 4. Drain Current @ T
400
-4.4
10
T
500
J
= 100ºC
-4.2
V
V
V
DS
GS
DS
600
15
- Volts
- Volts
- Volts
-4.0
700
IXTH10N100D2
IXTT10N100D2
T
V
J
GS
800
-3.8
20
= 25ºC
J
= 5V
= 25ºC
∆
2V
1V
V
900
- 2V
- 3V
DS
-1V
0V
-3.6
= 700V - 100V
1000 1100 1200
25
J
= 25ºC
V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
- 5.00V
GS
-3.4
=
-3.2
30