IXFA180N10T2 IXYS, IXFA180N10T2 Datasheet - Page 4

• Manufacturer Part Number: IXFA180N10T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFA180N10T2

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 66
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
10
0
0
3.0
0.3
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.5
0.5
10
4.0
0.6
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
= 150ºC
15
0.7
V
4.5
GS
V
V
SD
DS
- Volts
0.8
- Volts
20
- Volts
T
5.0
J
= 150ºC
0.9
- 40ºC
25
25ºC
T
J
C iss
C oss
C rss
= 25ºC
1.0
5.5
30
1.1
6.0
35
1.2
6.5
1.3
40
1000
160
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
V
I
I
T
T
Single Pulse
D
G
DS
DS(on)
C
J
20
= 90A
= 10mA
20
= 25ºC
= 175ºC
= 50V
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
40
10ms
Fig. 8. Transconductance
60
60
Fig. 10. Gate Charge
Q
1ms
80
G
- NanoCoulombs
I
D
V
80
DS
- Amperes
100ms
100
10
- Volts
100µs
100
DC
IXFA180N10T2
IXFP180N10T2
120
120
140
25µs
T
J
= - 40ºC
140
160
25ºC
150ºC
160
180
180
100
200