IXFA180N10T2 IXYS, IXFA180N10T2 Datasheet - Page 5

• Manufacturer Part Number: IXFA180N10T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFA180N10T2

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 66
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263

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20
19
18
17
16
15
14
13
17
16
15
14
13
12
11
50
45
40
35
30
25
20
15
10
5
0
90
2
25
t
R
V
t
T
V
f
3
r
J
G
DS
DS
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
= 125ºC, V
100
= 2Ω, V
35
= 50V
= 50V
4
Fig. 13. Resistive Turn-on Rise Time vs.
GS
110
45
5
= 10V
t
GS
d(off)
t
I
d(on)
D
= 10V
= 90A, 180A
6
- - - - -
120
55
- - - - -
Junction Temperature
T
Gate Resistance
I
7
R
J
I
D
Drain Current
- Degrees Centigrade
G
D
= 45A
I
65
130
D
= 90A
- Ohms
8
- Amperes
75
9
140
10
85
150
11
R
V
95
12
160
G
DS
= 2Ω , V
= 50V
T
T
J
J
13
105
= 125ºC
= 25ºC
170
GS
14
= 10V
115
180
15
50
46
42
38
34
30
26
26
25
24
23
22
21
20
19
125
17
16
15
14
13
12
19
18
17
16
15
14
13
12
11
10
55
50
45
40
35
30
25
20
15
10
5
25
2
90
Fig. 18. Resistive Turn-off Switching Times vs.
t
R
V
t
T
V
Fig. 16. Resistive Turn-off Switching Times vs.
3
R
V
f
f
DS
J
DS
G
35
DS
G
= 125ºC, V
= 2Ω, V
100
= 2Ω , V
= 50V
= 50V
= 50V
4
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
5
GS
110
GS
t
= 10V
t
d(off)
= 10V
d(off)
I
D
55
= 10V
Junction Temperature
6
= 90A
- - - - -
T
- - - - -
J
120
Gate Resistance
- Degrees Centigrade
7
65
I
R
D
Drain Current
G
8
- Amperes
130
- Ohms
75
T
T
9
J
J
= 25ºC
= 125ºC
85
140
10
IXFA180N10T2
IXFP180N10T2
11
95
150
I
D
= 180A, 90A
12
105
I
D
= 180A
160
13
115
14
170
125
15
46
44
42
40
38
36
34
32
30
28
46
44
42
40
38
36
180