IXTP80N12T2 IXYS, IXTP80N12T2 Datasheet - Page 4

• Manufacturer Part Number: IXTP80N12T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTP80N12T2

• Vdss, Max, (v): 120
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 4740
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 90
• Pd, (w): 325
• Rthjc, Max, (k/w): 0.46
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
100
250
200
150
100
140
120
100
10
50
80
60
40
20
0
0
0.3
0
3
f
0.4
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
0.6
10
4
Fig. 7. Input Admittance
T
0.7
J
Fig. 11. Capacitance
= 150ºC
15
0.8
T
V
V
V
J
DS
SD
GS
= 150ºC
- 40ºC
0.9
- Volts
- Volts
20
- Volts
25ºC
5
T
1.0
J
= 25ºC
25
1.1
C oss
C rss
C iss
1.2
30
6
1.3
35
1.4
1.5
40
7
1000
120
100
100
0.1
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
T
T
Single Pulse
J
C
V
I
I
DS(on)
D
G
DS
= 175ºC
= 25ºC
= 40A
= 10mA
20
10
= 60V
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
20
Fig. 8. Transconductance
10
Fig. 10. Gate Charge
60
30
Q
G
I
- NanoCoulombs
D
V
DS
- Amperes
80
- Volts
40
100
50
IXTA80N12T2
IXTP80N12T2
DC
100
T
J
= - 40ºC
25µs
100µs
1ms
10ms
125ºC
120
60
25ºC
140
70
1,000
160
80