IXTP80N12T2 IXYS, IXTP80N12T2 Datasheet - Page 5

• Manufacturer Part Number: IXTP80N12T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTP80N12T2

• Vdss, Max, (v): 120
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 4740
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 90
• Pd, (w): 325
• Rthjc, Max, (k/w): 0.46
• Package Style: TO-220

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20
19
18
17
16
15
14
13
12
11
10
180
160
140
120
100
40
35
30
25
20
15
10
80
60
40
20
0
25
40
10
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
G
DS
T
V
35
t
= 10Ω , V
J
r
DS
T
45
= 60V
= 125ºC, V
15
J
= 60V
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
45
GS
50
20
t
GS
= 10V
d(on)
55
= 10V
Junction Temperature
- - - -
T
Gate Resistance
55
25
Drain Current
J
- Degrees Centigrade
I
D
65
R
- Amperes
G
- Ohms
60
30
75
I
D
I
= 80A
D
65
35
= 80A
I
R
V
t
85
D
f
G
DS
= 40A
= 10Ω, V
= 60V
40
70
95
GS
I
t
D
d(off)
= 10V
= 40A
105
45
75
- - - -
115
50
80
135
120
105
90
75
60
45
30
15
0
80
70
60
50
40
30
20
125
20
19
18
17
16
15
14
13
12
11
10
140
120
100
60
50
40
30
20
10
80
60
40
20
0
0
40
25
10
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
R
V
t
R
V
G
DS
T
V
t
35
f
DS
G
f
J
DS
= 10Ω , V
45
15
= 125ºC, V
= 60V
= 10Ω, V
= 60V
= 60V
Fig. 14. Resistive Turn-on Rise Time vs.
45
20
GS
GS
50
t
GS
t
d(off)
= 10V
= 10V
d(off)
55
Junction Temperature
= 10V
T
J
- - - -
Gate Resistance
- - - -
25
- Degrees Centigrade
55
65
R
Drain Current
I
G
D
I
D
= 40A
- Ohms
30
- Amperes
75
60
I
D
T
= 80A, 40A
85
J
T
35
J
= 125ºC
= 25ºC
I
D
65
= 80A
95
IXTA80N12T2
IXTP80N12T2
40
105
70
45
115
75
50
125
350
300
250
200
150
100
50
0
80
70
60
50
40
30
20
80