IXTA26P10T IXYS, IXTA26P10T Datasheet

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IXTA26P10T

Manufacturer Part Number
IXTA26P10T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTA26P10T

Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-26
Rds(on), Max, Tj=25°c, (?)
0.09
Ciss, Typ, (pf)
3820
Qg, Typ, (nc)
52
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
0.83
Package Style
TO-263
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
TrenchP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
DSS
DGR
GSS
GSM
AS
D
J
JM
stg
L
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Test Conditions
V
V
V
V
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 15V, V
= V
= -10V, I
GS
DSS
, I
D
, V
D
= - 250μA
D
= - 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTA26P10T
IXTY26P10T
IXTP26P10T
-55 ... +150
-55 ... +150
-100
- 2.0
Characteristic Values
Min.
Maximum Ratings
1.13 / 10
-100
-100
+ 15
+ 25
0.35
2.50
3.00
- 26
- 80
- 26
300
150
150
300
260
Typ.
- 250 μA
- 4.5
Nm/lb.in.
Max.
- 10 μA
±50 nA
90 mΩ
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
g
V
I
R
TO-252 (IXTY)
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
International Standard Packages
Extended FBSOA
Fast Intrinsic Diode
Low R
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
DS(ON)
G
D S
≤ ≤ ≤ ≤ ≤
=
=
G
G
and Q
D
Tab = Drain
S
S
D (Tab)
- 26A
-100V
D (Tab)
= Drain
G
D (Tab)
90mΩ Ω Ω Ω Ω
DS100291(10/10)

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IXTA26P10T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTY26P10T IXTA26P10T IXTP26P10T Maximum Ratings -100 = 1MΩ -100 300 150 -55 ... +150 150 -55 ... +150 300 260 1. 0.35 2.50 3.00 Characteristic Values Min ...

Page 2

... L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTY26P10T IXTA26P10T IXTP26P10T TO-252 Outline Max Pins Gate 3 - Source ns Dim. Millimeter ns Min. Max 2.19 2.38 A1 0.89 1. 0.13 b 0.64 0. 0.76 1. ...

Page 3

... Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade J IXTA26P10T IXTP26P10T = 25ºC J -20 -25 -30 = -13A vs 26A I = -13A D 100 125 150 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC C Single Pulse 0 Volts DS IXTA26P10T IXTP26P10T 40ºC J 25ºC 125ºC -25 -30 -35 - 25µs 100µs 1ms 10ms 100ms DC - 100 - 1000 ...

Page 5

... Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º -10V 50V -13A Ohms G IXTA26P10T IXTP26P10T R = 3Ω -10V 50V DS -22 -24 - d(off -10V 50V 105 115 125 80 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTY26P10T IXTA26P10T IXTP26P10T 0.1 1 IXYS REF: T_26P10T(A2)10-21-10 10 ...

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