IXTA26P10T IXYS, IXTA26P10T Datasheet - Page 4

• Manufacturer Part Number: IXTA26P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTA26P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -26
• Rds(on), Max, Tj=25°c, (?): 0.09
• Ciss, Typ, (pf): 3820
• Qg, Typ, (nc): 52
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 0.83
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
-80
-70
-60
-50
-40
-30
-20
-10
100
-40
-35
-30
-25
-20
-15
-10
10
-5
0
0
-0.3
-3.0
0
f
-0.4
= 1 MHz
-3.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-0.5
-4.0
-10
-0.6
T
Fig. 7. Input Admittance
J
-4.5
Fig. 11. Capacitance
= 125ºC
-0.7
-15
V
V
-5.0
-0.8
V
GS
SD
DS
- Volts
- Volts
-20
T
- Volts
J
-0.9
= 125ºC
-5.5
- 40ºC
25ºC
T
J
-25
= 25ºC
-1.0
-6.0
C iss
C oss
C rss
-1.1
-30
-6.5
-1.2
-35
-7.0
-1.3
-7.5
-1.4
-40
-
-
100
-
0.1
-10
30
25
20
15
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
5
0
0
-
1
0
0
R
T
T
Single Pulse
DS(on)
J
C
V
I
I
= 150ºC
D
G
DS
= 25ºC
5
= -13A
= -1mA
-5
= - 50V
Limit
Fig. 12. Forward-Bias Safe Operating Area
10
-10
IXTY26P10T
15
Fig. 8. Transconductance
-
10
Fig. 10. Gate Charge
20
-15
Q
G
I
- NanoCoulombs
D
25
- Amperes
V
DS
-20
- Volts
30
-25
DC
35
-
100
IXTA26P10T
IXTP26P10T
25µs
100µs
1ms
10ms
100ms
T
40
J
-30
= - 40ºC
125ºC
25ºC
45
-35
50
-
1000
-40
55