IXXH50N60B3D1 IXYS, IXXH50N60B3D1 Datasheet - Page 2
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IXXH50N60B3D1
Manufacturer Part Number
IXXH50N60B3D1
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXH50N60B3D1.pdf
(7 pages)
Specifications of IXXH50N60B3D1
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
120
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
135
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.2
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
30
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g(on)
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
I
V
I
F
F
F
R
= 24A, V
= 30A, V
= 100V
= 1A, V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 36A, V
= 36A, V
= 36A, V
= 36A, V
= 25V, V
= 360V, R
= 360V, R
GE
GE
ADVANCE TECHNICAL INFORMATION
GE
= 0V, -di
= 0V, Note 1
= 0V, -di
GE
GE
GE
CE
GE
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 5
= 5
F
4,835,592
4,881,106
F
/dt = 100A/μs, V
/dt = 100A/μs,
J
J
Ω
Ω
= 25°C
= 150°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
R
CES
= 30V
5,049,961
5,063,307
5,187,117
T
T
T
J
J
J
= 150°C
Characteristic Values
= 100°C
= 100°C
12
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2230
0.67
0.74
1.40
1.20
0.21
Typ.
195
100
135
130
190
19
44
70
16
29
27
40
30
45
CE
Typ.
1.6
100
(clamp), T
25
Max.
1.20
0.25 °C/W
150
6,404,065 B1
6,534,343
6,583,505
0.9 °C/W
Max.
2.7
4
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXXH50N60B3D1
TO-247 (IXXH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
3 - Emitted
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216