IXXH50N60B3D1 IXYS, IXXH50N60B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXXH50N60B3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH50N60B3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 120
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 135
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.2
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

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6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0
8
0
18A
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
9
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
10
1
Gate-to-Emitter Voltage
1
36A
V
1.5
V
CE
11
CE
V
GE
- Volts
- Volts
1.5
- Volts
V
GE
V
GE
12
= 15V
2
I
= 15V
14V
13V
C
14V
13V
= 72A
2
2.5
13
J
J
= 150ºC
= 25ºC
T
2.5
J
14
3
= 25ºC
12V
11V
10V
12V
11V
8V
7V
6V
10V
9V
9V
8V
7V
3.5
15
3
200
180
160
140
120
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
5
6
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
10
Junction Temperature
25
7
T
J
IXXH50N60B3D1
- Degrees Centigrade
V
T
CE
J
50
V
8
= 150ºC
GE
15
- Volts
25ºC
V
- Volts
GE
75
9
= 15V
I
I
I
C
C
C
14V
20
= 72A
= 36A
= 18A
CE(sat)
100
- 40ºC
10
13V
on
125
11
25
12V
J
= 25ºC
11V
150
12
10V
30
9V
7V
175
13