IXXK200N60B3 IXYS, IXXK200N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXXK200N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXK200N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 380
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 200
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 3.45
• Rthjc, Max, Igbt (c/w): 0.092
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
1000
100
110
100
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 175ºC
= 25ºC
External Lead Limit
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
Fig. 7. Transconductance
60
10
Fig. 9. Capacitance
15
80
V
C ies
C oes
C res
DS
I
V
C
CE
- Amperes
- Volts
100
- Volts
20
T
J
= - 40ºC, 25ºC, 150ºC
120
25
100
140
30
160
35
180
25µs
100µs
1ms
10ms
DC
1000
200
40
0.0001
0.001
0.01
400
300
200
100
0.1
16
14
12
10
0.00001
0
8
6
4
2
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
J
Fig. 12. Maximum Transient Thermal Impedance
CE
G
= 200A
= 10mA
= 150ºC
= 1
= 300V
40
0.0001
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
80
0.001
Fig. 8. Gate Charge
300
Pulse Width - Seconds
120
Q
G
- NanoCoulombs
V
CE
0.01
160
- Volts
400
IXXK200N60B3
IXXX200N60B3
200
0.1
500
240
1
280
600
320
10