IXXK200N60B3 IXYS, IXXK200N60B3 Datasheet - Page 6

• Manufacturer Part Number: IXXK200N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXK200N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 380
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 200
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 3.45
• Rthjc, Max, Igbt (c/w): 0.092
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
150
130
110
180
160
140
120
100
90
70
50
30
10
80
60
40
20
25
1
Fig. 21. Inductive Turn-on Switching Times vs.
T
V
Fig. 19. Inductive Turn-on Switching Times vs.
t
r i
J
CE
= 150ºC, V
2
= 360V
50
3
GE
t
I
d(on)
= 15V
Junction Temperature
C
I
= 100A
C
T
4
J
= 50A
- - - -
Gate Resistance
- Degrees Centigrade
75
R
G
5
- Ohms
I
C
6
= 100A
100
t
R
V
r i
CE
G
= 1
= 360V
7
Ω
, V
GE
I
8
125
C
= 15V
t
= 50A
d(on)
- - - -
9
150
10
52
50
48
46
44
42
40
38
115
105
95
85
75
65
55
45
35
120
100
80
60
40
20
0
50
Fig. 20. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
55
= 1
= 360V
Ω
, V
60
T
GE
J
= 25ºC
t
= 15V
d(on)
65
Collector Current
- - - -
T
70
J
= 150ºC
I
C
75
- Amperes
80
IXXK200N60B3
IXXX200N60B3
85
90
IXYS REF: IXX_200N60B3(91)8-18-11
95
100
50
48
46
44
42
40
38