IXYH40N120B3D1 IXYS, IXYH40N120B3D1 Datasheet

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IXYH40N120B3D1

Manufacturer Part Number
IXYH40N120B3D1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYH40N120B3D1

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
86
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
183
Eoff, Typ, Tj = 125°c, Igbt (mj)
2.05
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.26
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
1200V XPT
GenX3
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 40A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 10Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXYH40N120B3D1
1200
Min.
Characteristic Values
3.0
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
1.13/10
CM
Typ.
2.9
2.4
1200
1200
= 80
400
±20
±30
180
V
480
150
300
260
40
25
86
20
CES
6
±100
Max.
500
Nm/lb.in.
2.7
5.0
50
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 5-30kHZ Switching
Square RBSOA
Positive Thermal Coefficient of
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
= 1200V
= 40A
= 183ns
≤ ≤ ≤ ≤ ≤ 2.7V
C
Tab = Collector
Tab
= Collector
DS100413(11/11)

Related parts for IXYH40N120B3D1

IXYH40N120B3D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 40A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYH40N120B3D1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 180 20 400 = 10Ω ≤ ...

Page 2

... J /dt = 100A/μ 100° 100°C 100 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYH40N120B3D1 TO-247 (IXYH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter ns Min. Max ...

Page 3

... T = 25º 80A C 40A 20A IXYH40N120B3D1 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 80A 40A -50 - ...

Page 4

... C ies oes res 0 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXYH40N120B3D1 Fig. 8. Gate Charge V = 600V 80A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC ...

Page 5

... 15V 600V CE 240 250 220 200 200 150 180 100 160 50 140 120 IXYH40N120B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V Amperes C Fig. 15. Inductive Turn-off Switching Times vs. ...

Page 6

... I = 40A 100 125 IXYH40N120B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 600V 125º 25º Amperes C ...

Page 7

... 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery Time t rr 0.01 0.1 t IXYH40N120B3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt Fig. 23. Peak Reverse Current I ...

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