IXYH40N120B3D1 IXYS, IXYH40N120B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXYH40N120B3D1
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH40N120B3D1

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 86
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 40
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 183
• Eoff, Typ, Tj = 125°c, Igbt (mj): 2.05
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.26
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 25
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

© 2011 IXYS CORPORATION, All Rights Reserved
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
0
6
0
0.5
0.5
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
1
8
1
1.5
Gate-to-Emitter Voltage
1.5
9
2
V
V
V
10
V
2.5
2
GE
CE
CE
GE
V
= 15V
- Volts
GE
- Volts
- Volts
13V
11V
10V
9V
8V
I
= 15V
C
3
2.5
11
13V
12V
11V
10V
= 80A
40A
20A
3.5
12
3
J
4
J
= 150ºC
= 25ºC
3.5
13
4.5
T
J
7V
6V
5V
= 25ºC
14
4
5
8V
9V
7V
6V
5.5
4.5
15
100
240
200
160
120
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
80
70
60
50
40
30
20
10
80
40
0
0
-50
0
3
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
= 15V
4
5
0
Fig. 4. Dependence of V
5
Fig. 6. Input Admittance
Junction Temperature
10
25
T
IXYH40N120B3D1
J
- Degrees Centigrade
6
I
50
V
V
V
C
CE
GE
GE
= 80A
15
- Volts
- Volts
= 15V
I
C
14V
75
= 40A
I
7
13V
C
= 20A
CE(sat)
100
12V
20
T
J
= - 40ºC
8
11V
150ºC
25ºC
on
125
10V
J
25
= 25ºC
9V
9
150
8V
7V
6V
175
10
30