IXYK100N120C3 IXYS, IXYK100N120C3 Datasheet - Page 4
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IXYK100N120C3
Manufacturer Part Number
IXYK100N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYK100N120C3.pdf
(6 pages)
Specifications of IXYK100N120C3
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
188
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
100
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.13
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
0.001
1,000
0.01
0.3
0.1
90
80
70
60
50
40
30
20
10
100
0.00001
0
10
1
0
0
f
20
= 1 MHz
5
40
10
Fig. 7. Transconductance
60
0.0001
Fig. 9. Capacitance
15
80
I
C
V
CE
- Amperes
100
- Volts
20
120
25
Fig. 11. Maximum Transient Thermal Impedance
140
0.001
T
30
J
= - 40ºC
160
C oes
C ies
C res
125ºC
25ºC
35
180
Pulse Width - Seconds
200
40
a a a a a a
0.01
220
200
180
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
300
C
G
J
G
CE
= 150ºC
= 100A
= 10mA
= 1
= 600V
40
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
0.1
500
80
Fig. 8. Gate Charge
600
Q
G
120
- NanoCoulombs
V
700
CE
- Volts
800
IXYK100N120C3
IXYX100N120C3
160
900
1
200
1000
1100
240
1200
1300
10
280