IXYK100N120C3 IXYS, IXYK100N120C3 Datasheet - Page 6
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IXYK100N120C3
Manufacturer Part Number
IXYK100N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYK100N120C3.pdf
(6 pages)
Specifications of IXYK100N120C3
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
188
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
100
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.13
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
160
120
160
140
120
100
80
40
80
60
40
20
0
0
25
1
I
Fig. 18. Inductive Turn-on Switching Times vs.
C
Fig. 20. Inductive Turn-on Switching Times vs.
t
T
V
t
R
V
= 100A
r i
J
CE
r i
CE
G
2
= 125ºC, V
= 1
= 600V
= 600V
I
Ω
C
, V
= 50A
3
50
GE
GE
t
t
= 15V
d(on)
d(on)
= 15V
Junction Temperature
T
4
J
Gate Resistance
- - - -
- - - -
- Degrees Centigrade
R
G
- Ohms
5
75
I
6
I
C
C
= 100A
= 50A
7
100
8
9
125
10
70
60
50
40
30
20
35
34
33
32
31
30
29
28
27
140
120
100
80
60
40
20
50
t
R
V
Fig. 19. Inductive Turn-on Switching Times vs.
r i
55
G
CE
= 1
= 600V
Ω
60
, V
GE
t
= 15V
d(on)
65
- - - -
Collector Current
70
I
C
75
- Amperes
80
T
IXYK100N120C3
IXYX100N120C3
J
= 125ºC
85
90
IXYS REF: IXY_100N120C3(9T)10-26-11
T
J
95
= 25ºC
100
33
32
31
30
29
28
27