IXYX100N120C3 IXYS, IXYX100N120C3 Datasheet

no-image

IXYX100N120C3

Manufacturer Part Number
IXYX100N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYX100N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
188
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
100
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.13
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
PLUS247
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C (Chip Capability)
= 110°C
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= I
= 250μA, V
TM
C110
CES
, V
, V
IGBTs
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
= 15V, Note 1
CE
GE
= V
(PLUS247)
= 0V
GE
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYK100N120C3
IXYX100N120C3
1200
20..120 /4.5..27
Min.
Characteristic Values
3.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
= 200
1150
1200
1200
2.9
4.1
±20
±30
490
V
100
175
300
260
188
160
1.2
50
CES
10
6
±100
1.25 mA
Max.
Nm/lb.in.
3.5
5.0
25
N/lb.
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
A
g
g
J
V
I
V
t
TO-264 (IXYK)
PLUS247 (IXYX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
G
C
E
G
= 1200V
= 100A
= 110ns
C
≤ ≤ ≤ ≤ ≤ 3.5V
E
E
Tab = Collector
DS100404(10/11)
Tab
= Emitter
Tab

Related parts for IXYX100N120C3

IXYX100N120C3 Summary of contents

Page 1

... CE CES GE = ±20V 0V, V GES 15V, Note 1 CE(sat) C C110 GE © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYK100N120C3 IXYX100N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 188 160 100 490 50 1.2 = 1Ω 200 G CM ≤ ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYK100N120C3 IXYX100N120C3 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 5. 0.13 °C/W °C/W ...

Page 3

... T = 25ºC 180 J 160 140 = 200A 120 C 100 100A 50A IXYK100N120C3 IXYX100N120C3 Fig. 2. Extended Output Characteristics @ T 11V V = 15V GE 13V 12V 10V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 200A C 1.8 1.6 1 ...

Page 4

... C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYK100N120C3 IXYX100N120C3 Fig. 8. Gate Charge V = 600V 100A 10mA 120 160 200 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... 100 125 170 220 150 200 130 180 110 160 90 140 70 120 100 100 IXYK100N120C3 IXYX100N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º ...

Page 6

... 100 125 IXYK100N120C3 IXYX100N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 125º 600V Amperes C 33 ...

Related keywords