IXYX100N120C3 IXYS, IXYX100N120C3 Datasheet - Page 4

• Manufacturer Part Number: IXYX100N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYX100N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 188
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.5
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.55
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.13
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
0.001
1,000
0.01
0.3
0.1
90
80
70
60
50
40
30
20
10
100
0.00001
0
10
1
0
0
f
20
= 1 MHz
5
40
10
Fig. 7. Transconductance
60
0.0001
Fig. 9. Capacitance
15
80
I
C
V
CE
- Amperes
100
- Volts
20
120
25
Fig. 11. Maximum Transient Thermal Impedance
140
0.001
T
30
J
= - 40ºC
160
C oes
C ies
C res
125ºC
25ºC
35
180
Pulse Width - Seconds
200
40
a a a a a a
0.01
220
200
180
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
300
C
G
J
G
CE
= 150ºC
= 100A
= 10mA
= 1
= 600V
40
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
0.1
500
80
Fig. 8. Gate Charge
600
Q
G
120
- NanoCoulombs
V
700
CE
- Volts
800
IXYK100N120C3
IXYX100N120C3
160
900
1
200
1000
1100
240
1200
1300
10
280