IXGT32N60CD1 IXYS, IXGT32N60CD1 Datasheet - Page 3

• Manufacturer Part Number: IXGT32N60CD1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGT32N60CD1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.85
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268

© 2002 IXYS All rights reserved
100
100
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
Fig. 1. Output Characteristics
Fig. 3. High Temperature Output Characteristics
0
0
3
Fig. 5. Admittance Curves
T
V
J
CE
= 25°C
T
= 10V
4
J
= 125°C
1
1
T
J
= 125°C
5
V
V
GE
GE
V
2
V
2
= 15V
CE
GE
= 15V
6
V
13V
13V
CE
- Volts
- Volts
T
- Volts
J
= 25°C
7
3
3
11V
8
4
4
11V
9
7V
9V
5V
5V
7V
9V
5
10
5
10000
1000
1.50
1.25
1.00
0.75
0.50
100
200
160
120
10
80
40
0
25
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of V
Fig. 6. Capacitance Curves
0
0
V
GE
5
T
= 15V
J
50
= 25°C
V
2
GE
10
= 15V
T
IXGH 32N60CD1
IXGT 32N60CD1
J
15
75
V
- Degrees C
4
C
V
C
C
CE
oss
rss
CE
iss
-Volts
20
- Volts
13V
100
6
25
I
I
I
C
C
C
= 64A
= 32A
= 16A
30
f = 1Mhz
125
8
35
11V
5V
9V
7V
CE(sat)
150
40
10