IXGT32N60CD1 IXYS, IXGT32N60CD1 Datasheet - Page 5

• Manufacturer Part Number: IXGT32N60CD1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGT32N60CD1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.85
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268

Fig. 12 Forward current I
Fig. 15 Dynamic parameters Q
Fig. 18 Transient thermal resistance junction to case
Z
© 2002 IXYS All rights reserved
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
versus T
=100°C
=150°C
40
1
I
RM
Q
r
0.0001
VJ
80
2
T
VJ
F
T
V
120
VJ
versus V
F
=25°C
3
°C
r
, I
0.001
V
160
RM
F
t
rr
Q
1000
Fig. 13 Reverse recovery charge Q
Fig. 16 Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
F
= 60A
= 30A
= 15A
/dt
-di
600
F
-di
/dt
T
V
VJ
t
F
R
rr
/dt
= 100°C
= 300V
versus -di
A/µs
s
800
A/µs
DSEP 29-06
1000
1000
1
F
r
/dt
I
V
RM
FR
Fig. 14 Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 17 Peak forward voltage V
t
A
fr
5
0
V
5
0
1
2
3
0
0
i
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
IXGH 32N60CD1
IXGT 32N60CD1
versus -di
versus di
I
I
I
F
F
F
R
0.502
0.193
0.205
= 60A
= 30A
= 15A
400
400
thi
(K/W)
thJC
V
FR
F
/dt
600
F
600
calculation:
/dt
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
µs
and
t
fr