IXGT72N60B3 IXYS, IXGT72N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXGT72N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGT72N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 72
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.80
• Tfi, Typ, Tj=25°c, Igbt, (ns): 90
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
130
120
110
100
100
90
80
70
60
50
40
30
20
10
1.00
0.10
0.01
10
0
0.00001
0
0
T
J
f
= - 40ºC
= 1 MHz
20
125ºC
5
25ºC
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
0.0001
I
15
C
80
- Amperes
V
CE
100
- Volts
20
120
C res
C oes
C ies
25
Fig. 11. Maximum Transient Thermal Impedance
140
30
0.001
160
35
180
Pulse Width - Seconds
200
40
0.01
280
240
200
160
120
80
40
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
20
C
G
CE
J
G
= 60A
= 10mA
= 125ºC
= 3Ω
= 300V
40
200
60
0.1
Fig. 8. Gate Charge
80
Q
300
G
V
100 120 140 160 180 200 220 240
- NanoCoulombs
CE
- Volts
400
1
IXGT72N60B3
IXGH72N60B3
500
IXYS REF: G_72N60B3(76)02-10-09-D
600
10