IXGT72N60B3 IXYS, IXGT72N60B3 Datasheet - Page 6
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IXGT72N60B3
Manufacturer Part Number
IXGT72N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGT72N60B3.pdf
(6 pages)
Specifications of IXGT72N60B3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
72
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.80
Tfi, Typ, Tj=25°c, Igbt, (ns)
90
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.23
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
170
150
130
110
90
80
70
60
50
40
30
20
10
90
70
50
30
10
0
25
0
Switching Times vs. Junction Temperature
t
T
V
35
r
Switching Times vs. Gate Resistance
J
CE
5
= 125ºC, V
I
= 480V
C
10
= 100A
45
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
T
15
J
t
55
d(on)
I
GE
- Degrees Centigrade
C
= 25A
= 15V
20
- - - -
I
R
65
C
I
I
G
C
= 100A
C
= 50A
- Ohms
25
= 25A
I
75
C
= 50A
30
t
R
V
85
r
CE
G
35
= 3
= 480V
Ω
95
, V
40
t
d(on
GE
105
45
= 15V
)
- - - -
115
50
125
55
140
125
110
95
80
65
50
35
20
35
34
33
32
31
30
29
28
27
26
25
90
80
70
60
50
40
30
20
10
20
t
R
V
Switching Times vs. Collector Current
r
G
CE
= 3Ω , V
30
= 480V
T
J
= 25ºC, 125ºC
Fig. 19. Inductive Turn-on
t
40
d(on)
GE
= 15V
- - - -
I
50
C
- Amperes
60
70
25ºC < T
IXGT72N60B3
IXGH72N60B3
80
J
< 125ºC
IXYS REF: G_72N60B3(76)02-10-09-D
90
100
34
33
32
31
30
29
28
27
26