IXGH56N60A3 IXYS, IXGH56N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGH56N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGH56N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 150
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 315
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.75
• Rthjc, Max, Igbt, (°c/w): 0.375
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
70
60
50
40
30
20
10
10
0.0001
0
0
0
f
T
= 1 MHz
10
J
= - 40ºC
5
125ºC
25ºC
20
10
Fig. 7. Transconductance
30
Fig. 9. Capacitance
15
40
0.001
I
C
V
CE
- Amperes
50
20
- Volts
60
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
70
30
80
0.01
35
90
Pulse Width - Seconds
100
40
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
C
G
G
CE
= 125ºC
0.1
= 44A
= 10mA
= 5Ω
= 300V
20
Fig. 10. Reverse-Bias Safe Operating Area
200
40
Fig. 8. Gate Charge
Q
300
G
60
- NanoCoulombs
V
CE
IXGH56N60A3
- Volts
80
1
400
100
IXYS REF: G_56N60A3(65)8-04-09-C
120
500
140
600
10