IXGH56N60A3 IXYS, IXGH56N60A3 Datasheet - Page 6
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IXGH56N60A3
Manufacturer Part Number
IXGH56N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGH56N60A3.pdf
(6 pages)
Specifications of IXGH56N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
150
Ic110, Tc=110°c, Igbt, (a)
56
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
315
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.75
Rthjc, Max, Igbt, (°c/w)
0.375
Package Style
TO-247
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
120
110
100
240
200
160
120
90
80
70
60
50
40
30
20
80
40
0
25
5
t
T
V
I
t
R
V
J
C
r i
CE
r i
CE
G
35
= 125ºC, V
Switching Times vs. Junction Temperature
= 88A
10
= 5Ω , V
= 480V
= 480V
Switching Times vs. Gate Resistance
45
15
GE
GE
t
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
= 15V
t
d(on)
= 15V
d(on)
55
T
20
- - - -
J
- - - -
- Degrees Centigrade
65
I
R
C
25
G
= 44A
- Ohms
75
30
I
I
C
C
85
= 88A
= 44A
35
95
40
105
45
115
125
50
120
100
80
60
40
20
0
40
38
36
34
32
30
28
26
24
22
20
120
100
80
60
40
20
0
20
t
R
V
r i
CE
G
= 5Ω , V
= 480V
30
Switching Times vs. Collector Current
GE
Fig. 19. Inductive Turn-on
= 15V
t
40
d(on)
- - - -
T
J
= 25ºC, 125ºC
I
50
C
- Amperes
IXGH56N60A3
60
70
80
IXYS REF: G_56N60A3(65)8-04-09-C
90
45
40
35
30
25
20
15