IXGH56N60B3D1 IXYS, IXGH56N60B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH56N60B3D1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGH56N60B3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 350
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 95
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.375
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: TO-247

© 2008 IXYS CORPORATION, All rights reserved
4.0
3.5
3.0
2.5
2.0
1.5
1.0
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
0.6
0.6
I
8
C
0.8
= 88A
V
44A
22A
0.8
V
V
9
CE
CE
GE
@ 125ºC
@ 25ºC
1.0
- Volts
- Volts
- Volts
1.0
10
1.2
1.2
11
V
1.4
GE
V
GE
= 15V
1.4
12
13V
11V
= 15V
1.6
13V
11V
T
J
1.6
= 25ºC
13
1.8
1.8
2.0
14
7V
5V
9V
7V
5V
9V
2.0
2.2
15
300
250
200
150
100
200
180
160
140
120
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
4.0
-50
0
V
GE
V
Fig. 2. Extended Output Characteristics
4.5
1
GE
-25
= 15V
= 15V
Fig. 4. Dependence of V
13V
11V
2
5.0
Fig. 6. Input Admittance
0
Junction Temperature
3
7V
T
9V
5.5
J
T
IXGH56N60B3D1
- Degrees Centigrade
J
25
V
V
= 125ºC
4
CE
GE
- 40ºC
6.0
@ 25ºC
25ºC
- Volts
- Volts
50
5
6.5
6
75
7.0
CE(sat)
7
100
7.5
I
I
I
8
C
C
on
C
= 88A
= 44A
= 22A
125
8.0
9
150
8.5
10