IXGH56N60B3D1 IXYS, IXGH56N60B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH56N60B3D1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGH56N60B3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 350
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 95
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.375
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: TO-247

IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
100
10
90
80
70
60
50
40
30
20
10
0.0001
0
0
0
f
= 1 MHz
5
20
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
15
I
V
C
0.001
60
CE
- Amperes
- Volts
20
80
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
T
J
100
= - 40ºC
30
125ºC
25ºC
120
35
0.01
Pulse Width - Seconds
140
40
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
0.1
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 40A
= 10mA
= 125ºC
= 5Ω
= 300V
20
200
40
Fig. 8. Gate Charge
Q
300
G
IXGH56N60B3D1
V
- NanoCoulombs
CE
60
- Volts
400
1
80
IXYS REF: G_56N60B3(65) 05-05-08-B
100
500
120
600
10
140