IXGX64N60B3D1 IXYS, IXGX64N60B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGX64N60B3D1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGX64N60B3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 400
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 88
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.95
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 1.35
• Package Style: PLUS247

© 2008 IXYS CORPORATION, All rights reserved
100
100
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
7
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.6
0.6
I
C
8
= 100A
0.8
0.8
50A
25A
V
V
V
9
CE
CE
GE
@ 125ºC
@ 25ºC
1.0
1.0
- Volts
- Volts
- Volts
10
1.2
1.2
11
V
GE
1.4
1.4
V
= 15V
GE
12
11V
= 15V
1.6
1.6
11V
T
J
13
= 25ºC
1.8
1.8
9V
7V
5V
14
2.0
2.0
7V
5V
9V
2.2
2.2
15
300
250
200
150
100
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
200
180
160
140
120
100
50
80
60
40
20
0
0
4.0
-50
0
V
Fig. 2. Extended Output Characteristics
GE
4.5
-25
= 15V
1
Fig. 4. Dependence of V
5.0
V
Fig. 6. Input Admittance
0
GE
Junction Temperature
= 15V
T
5.5
J
2
13V
11V
- Degrees Centigrade
T
25
J
V
V
CE
GE
= 125ºC
6.0
@ 25ºC
- 40ºC
- Volts
25ºC
- Volts
9V
7V
50
3
I
6.5
IXGK64N60B3D1
IXGX64N60B3D1
C
= 25A
75
7.0
4
CE(sat)
I
100
C
= 50A
7.5
I
on
C
5
= 100A
125
8.0
150
8.5
6