IXGX64N60B3D1 IXYS, IXGX64N60B3D1 Datasheet - Page 4

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IXGX64N60B3D1

Manufacturer Part Number
IXGX64N60B3D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGX64N60B3D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
400
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
64
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
88
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.95
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
1.35
Package Style
PLUS247
IXYS reserves the right to change limits, test conditions, and dimensions.
1.00
0.10
0.01
110
100
220
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0.0001
100
0
Fig. 9. Reverse-Bias Safe Operating Area
T
R
dV / dt < 10V / ns
20
J
G
= 125ºC
= 3 Ω
200
40
Fig. 7. Transconductance
60
300
I
C
V
80
- Amperes
CE
0.001
- Volts
100
400
T
J
120
= - 40ºC
125ºC
25ºC
Fig. 11. Maximum Transient Thermal Impedance
140
500
160
180
600
0.01
Pulse Width - Seconds
200
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
f
V
I
I
= 1 MHz
C
G
CE
0.1
20
= 50A
= 10 mA
5
= 300V
40
10
Fig. 8. Gate Charge
Fig. 10. Capacitance
60
Q
G
15
- NanoCoulombs
V
80
CE
20
- Volts
100
IXGK64N60B3D1
IXGX64N60B3D1
1
25
120
C ies
C oes
C res
30
140
35
160
180
40
10

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