MMIX1G320N60B3 IXYS, MMIX1G320N60B3 Datasheet

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MMIX1G320N60B3

Manufacturer Part Number
MMIX1G320N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of MMIX1G320N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
400
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
180
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.4
Rthjc, Max, Igbt, (°c/w)
0.125
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
GenX3
IGBT
(Electrically Isolated Tab)
Medium-Speed Low-Vsat PT
IGBT for 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
50/60Hz, 1 minute
Mounting Force
I
I
V
V
I
I
T
T
Test Conditions
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
600V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 1mA, V
= 4mA, V
= V
= 0V, V
= 100A, V
= 320A
CES
, V
VJ
GE
GE
CE
= 125°C, R
GE
= ± 20V
GE
= 0V
= V
= 0V
= 15V, Note 1
GE
GE
= 1MΩ
G
= 1Ω
Preliminary Technical Information
T
J
= 125°C
MMIX1G320N60B3
50..200/11..45
Min.
600
Characteristic Values
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
< V
= 320
2500
1000
1000
600
600
±20
±30
400
150
260
300
180
Typ.
1.20
1.67
CES
8
±400 nA
Max.
1.50
5.0
75 μA
2 mA
N/lb.
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
V
A
V
g
V
I
V
G = Gate
C = Collector
Features
Advantages
Applications
C25
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Optimized for Low Conduction and
Switching Losses
Very High Current Capability
Square RBSOA
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
E
Isolated Tab
E
≤ ≤ ≤ ≤ ≤ 1.50V
= 600V
= 400A
G
E
DS100264A(08/11)
= Emitter
C
C

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MMIX1G320N60B3 Summary of contents

Page 1

... 0V ± 20V GES 100A 15V, Note 1 CE(sat 320A C © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information MMIX1G320N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 400 180 1000 = 1Ω 320 < CES 1000 -55 ...

Page 2

... CE CES 215 44 66 2.7 250 165 3 3.5 330 265 5.4 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1G320N60B3 Max 5 0.125 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... Package Outline © 2011 IXYS CORPORATION, All Rights Reserved MMIX1G320N60B3 PIN Gate 5-12 = Emitter 13-24 = Collector ...

Page 4

... C 2.0 1 80A C 1.0 75 100 125 150 320 280 T = 125ºC J 240 25ºC - 40ºC 200 160 120 80 40 6.0 6.5 7.0 7.5 MMIX1G320N60B3 Fig. 2. Output Characteristics @ 15V GE 11V 0 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 320A C 160A 80A ...

Page 5

... IXYS CORPORATION, All Rights Reserved 100,000 10,000 1,000 100 10 400 500 600 1 0.3 0.1 0.01 0.001 400 450 500 550 600 650 0.00001 MMIX1G320N60B3 Fig. 8. Capacitance MHz Volts Fig. 11. Maximum Transient Thermal Impedance CE Fig. 10. Maximum Transient Thermal Impedance dasdasd 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ...

Page 6

... MMIX1G320N60B3 Fig. 12. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º 25ºC ...

Page 7

... MMIX1G320N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Collector Current d(on 1Ω 15V 480V 25º 125º Amperes ...

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