MMIX1G320N60B3 IXYS, MMIX1G320N60B3 Datasheet - Page 4

• Manufacturer Part Number: MMIX1G320N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of MMIX1G320N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 400
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 180
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.4
• Rthjc, Max, Igbt, (°c/w): 0.125
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
350
300
250
200
150
100
300
250
200
150
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
50
0
0
3.5
-50
0
V
GE
= 15V
4.0
-25
0.5
Fig. 1. Output Characteristics @ T
Fig. 3. Dependence of V
4.5
0
1
V
Fig. 5. Input Admittance
Junction Temperature
GE
T
= 15V
J
5.0
25
- Degrees Centigrade
11V
9V
V
1.5
CE
V
GE
- Volts
5.5
50
- Volts
I
I
I
8V
C
C
C
= 320A
= 160A
= 80A
2
T
J
7V
6V
5V
6.0
75
= 125ºC
CE(sat)
- 40ºC
25ºC
2.5
J
100
6.5
on
= 25ºC
3
125
7.0
150
3.5
7.5
350
300
250
200
150
100
320
280
240
200
160
120
3.5
3.0
2.5
2.0
1.5
1.0
50
80
40
0
0
0
0
5
6
0.5
Fig. 2. Output Characteristics @ T
50
7
Fig. 4. Collector-to-Emitter Voltage
80A
vs. Gate-to-Emitter Voltage
1
160A
Fig. 6. Transconductance
8
MMIX1G320N60B3
100
V
I
GE
C
= 320A
= 15V
11V
9
9V
1.5
V
I
C
V
CE
GE
- Amperes
- Volts
150
10
- Volts
2
11
8V
7V
6V
5V
T
200
J
= - 40ºC
12
2.5
J
25ºC
125ºC
= 125ºC
13
250
T
J
3
= 25ºC
14
3.5
300
15